Nanoscale resistance switching in manganite thin films: Sharp voltage threshold and pulse-width dependence
2010 | journal article. A publication with affiliation to the University of Göttingen.
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Nanoscale resistance switching in manganite thin films: Sharp voltage threshold and pulse-width dependence
Krisponeit, J.-O.; Kalkert, C.; Damaschke, B.; Moshnyaga, V. T. & Samwer, K. H. (2010)
PHYSICAL REVIEW B, 82(14) art. 144440. DOI: https://doi.org/10.1103/PhysRevB.82.144440
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Details
- Authors
- Krisponeit, Jon-Olaf; Kalkert, Christin; Damaschke, Bernd; Moshnyaga, Vasily T.; Samwer, Konrad H.
- Abstract
- We report the local-conductivity properties of a La0.8Ca0.2MnO3 thin film, studied by conductive atomic force microscopy. Nonvolatile and bipolar reversible switching of nanometer-sized regions was observed. A threshold voltage, U-c approximate to 3 V, and a logarithmic pulse-width dependence compatible with domain-wall creep were revealed. The results are difficult to explain in terms of an ionic drift scenario but rather indicate a switching mechanism based on orbital and accompanying structural changes. A phenomenological model of an electric field-induced structural transition is proposed.
- Issue Date
- 2010
- Status
- published
- Publisher
- Amer Physical Soc
- Journal
- PHYSICAL REVIEW B
- ISSN
- 1098-0121
- Sponsor
- DFG [SFB 602, TPA2]; Leibniz program
