Resistive switching at manganite/manganite interfaces
2011 | journal article. A publication with affiliation to the University of Göttingen.
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Resistive switching at manganite/manganite interfaces
Kalkert, C.; Krisponeit, J.-O.; Esseling, M.; Lebedev, O. I.; Moshnyaga, V. T.; Damaschke, B. & van Tendeloo, G. et al. (2011)
Applied Physics Letters, 99(13) art. 132512. DOI: https://doi.org/10.1063/1.3643425
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Details
- Authors
- Kalkert, Christin; Krisponeit, Jon-Olaf; Esseling, Markus; Lebedev, Oleg I.; Moshnyaga, Vasily T.; Damaschke, Bernd; van Tendeloo, Gustaaf; Samwer, Konrad H.
- Abstract
- We report bipolar resistive switching between the interfaces of manganite nanocolumns. La0.7Sr0.3MnO3 films were prepared on Al2O3 substrates, where the films grow in nanocolumns from the substrate to the surface. Conductive atomic force microscopy directly detects that the resistive switching is located at the boundaries of the grains. Furthermore, mesoscopic transport measurements reveal a tunnel magnetoresistance. In combination with the resistive switching, this leads to a total of four different resistive states. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3643425]
- Issue Date
- 2011
- Status
- published
- Publisher
- Amer Inst Physics
- Journal
- Applied Physics Letters
- ISSN
- 0003-6951
- Sponsor
- DFG [SFB 602]; TP [A2]; Leibniz-Program
