Direct synthesis of beta-FeSi2 by ion beam mixing of Fe/Si bilayers

2000 | journal article. A publication with affiliation to the University of Göttingen.

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​Direct synthesis of beta-FeSi2 by ion beam mixing of Fe/Si bilayers​
Milosavljevic, M.; Dhar, S.; Schaaf, P.; Bibic, N.; Han, M. & Lieb, K.-P.​ (2000) 
Applied Physics A, 71(1) pp. 43​-45​.​

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Authors
Milosavljevic, M.; Dhar, S.; Schaaf, Peter; Bibic, N.; Han, M.; Lieb, Klaus-Peter
Abstract
The iron di-silicide beta-FeSi2 is a promising direct band gap semiconductor but difficult to produce. Here, the successful direct synthesis of this phase by ion beam mixing of Fe/Si bilayers at temperatures in the range of 450 to 550 degrees C is reported. The obtained single-phase beta-FeSi2 layers and their structure are confirmed by Rutherford backscattering spectrometry, X-ray diffraction and conversion electron Mossbauer spectroscopy. PACS: 61.80.Jh; 68.55.Nq; 61.82.Fk.
Issue Date
2000
Status
published
Publisher
Springer
Journal
Applied Physics A 
ISSN
0947-8396

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