Visible cathodoluminescence from Eu-implanted single- and polycrystal c-BN annealed under high-temperature, high-pressure conditions
2004 | journal article. A publication with affiliation to the University of Göttingen.
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Visible cathodoluminescence from Eu-implanted single- and polycrystal c-BN annealed under high-temperature, high-pressure conditions
Vetter, U.; Hofsass, H. & Taniguchi, T. (2004)
Applied Physics Letters, 84(21) pp. 4286-4288. DOI: https://doi.org/10.1063/1.1753053
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Details
- Authors
- Vetter, Ulrich; Hofsass, H.; Taniguchi, T.
- Abstract
- Red and red/blue cathodoluminescence in the temperature range 12 to 300 K was obtained from single- and polycrystal cubic boron nitride bulk samples implanted with europium and annealed under high-temperature, high-pressure conditions. All observed radiative intra-4f electron transitions of Eu3+ can be assigned to transitions starting from the D-5(0) level of Eu3+. Additionally, radiative 4f(N-1)5d-->4f(N) electron transitions related to Eu2+ were detected in the polycrystal c-BN specimens. The higher-resolution Stark level as well as the time-resolved cathodoluminescence spectroscopy suggest that the Eu ions occupy at least two different sites in the c-BN host. (C) 2004 American Institute of Physics.
- Issue Date
- 2004
- Status
- published
- Publisher
- Amer Inst Physics
- Journal
- Applied Physics Letters
- ISSN
- 0003-6951
