Structural and electronic properties of epitaxial V2O3 thin films
2004 | journal article. A publication with affiliation to the University of Göttingen.
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Structural and electronic properties of epitaxial V2O3 thin films
Sass, B.; Tusche, C.; Felsch, W.; Quaas, N.; Weismann, A. & Wenderoth, M. (2004)
Journal of Physics Condensed Matter, 16(1) art. PII S0953-8984(04)71054-1. DOI: https://doi.org/10.1088/0953-8984/16/1/008
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- Authors
- Sass, B.; Tusche, C.; Felsch, W.; Quaas, N.; Weismann, Alexander; Wenderoth, Martin
- Abstract
- Thin films of V2O3 with thickness 4-300 nm were grown on (11 (2) over bar0)-oriented sapphire substrates by reactive dc magnetron sputtering. X-ray diffraction, pole figure measurements and scanning tunnelling microscopy show high crystallinity and epitaxy to the substrate with a faceted surface structure, and the absence of strain. Measurements of the electrical resistivity, scanning tunnelling and x-ray absorption spectroscopy show a metal-insulator transition near 150 K that is connected with the opening Of an energy gap and a characteristic modification of the absorption spectrum at the vanadium-2p and Oxygen-1 s edges. These observations reveal that the V2O3(11 (2) over bar0) films have bulk-like properties.
- Issue Date
- 2004
- Status
- published
- Publisher
- Iop Publishing Ltd
- Journal
- Journal of Physics Condensed Matter
- ISSN
- 0953-8984