Thermophysical properties of highly doped Si and Ge melts under microgravity
2009 | journal article. A publication with affiliation to the University of Göttingen.
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- Authors
- Chathoth, Suresh Mavila; Damaschke, Bernd; Samwer, Konrad H.; Schneider, S.
- Abstract
- We have investigated thermal expansion and surface tension of highly doped Si and Ge melts under microgravity conditions. The experiments were conducted in the TEMPUS facility on-board of a Zero-G aircraft. The thermophysical properties were quantified by analyzing the images of levitated droplets. Both Si and Ge are metallic in their solid state at the doping (P and Sb) of 1 x 10(19) atoms cm(-3). However, thermal expansion and surface tension of highly doped Si and Ge melts did not show significant changes in comparison with undoped samples. (C) 2009 American Institute of Physics. [doi:10.1063/1.3265439]
- Issue Date
- 2009
- Status
- published
- Publisher
- Amer Inst Physics
- Journal
- Journal of Applied Physics
- ISSN
- 0021-8979
- Sponsor
- DLR [50WM0541]