Prof. Dr. Hans Christian Hofsäß

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  • 2023 | Journal Article | 
    ​ ​Lateral Controlled Doping and Defect Engineering of Graphene by Ultra-Low-Energy Ion Implantation​
    Junge, F.; Auge, M.; Zarkua, Z. & Hofsäss, H. C. ​ (2023) 
    Nanomaterials, 13(4) pp. 658​.​ DOI: https://doi.org/10.3390/nano13040658 
    ​Details  DOI 
  • 2022 | Journal Article | Research Paper | 
    ​ ​Introducing Ultra-Low Energy Ion Implantation of Radioactive Isotopes at ISOLDE, CERN for (Near-)Surface Characterization: The ASPIC and ASCII Vacuum Chambers​
    van Stiphout, K.; Lieske, L.-A.; Auge, M. & Hofsäss, H. C. ​ (2022) 
    Crystals, 12(5).​ DOI: https://doi.org/10.3390/cryst12050626 
    ​Details  DOI 
  • 2022 | Journal Article
    ​ ​Thermal Annealing of Graphene Implanted with Mn at Ultralow Energies: From Disordered and Contaminated to Nearly Pristine Graphene​
    Lin, P.-C.; Villarreal, R.; Bana, H.; Zarkua, Z.; Hendriks, V.; Tsai, H.-C. & Auge, M. et al.​ (2022) 
    The Journal of Physical Chemistry C, 126(25) pp. 10494​-10505​.​ DOI: https://doi.org/10.1021/acs.jpcc.2c00855 
    ​Details  DOI 
  • 2020 | Journal Article
    ​ ​A comprehensive study of charge transport in Au-contacted graphene on Ge/Si(001)​
    Sinterhauf, A.; Bode, S.; Auge, M.; Lukosius, M.; Lippert, G.; Hofsäss, H.-C.   & Wenderoth, M. ​ (2020) 
    Applied Physics Letters, 117(2) pp. 023104​.​ DOI: https://doi.org/10.1063/5.0013802 
    ​Details  DOI 

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